Description
FM24C04B-G FRAM (Ferroelectric RAM) Memory IC 4Kbit I2C 1 MHz 550 ns 8-SOIC — BOLTON SKU 62846.
About the FM24C04B-G FRAM Memory, 4 Kbit I2C 8-SOIC
The FM24C04B-G is a 4-Kbit non-volatile ferroelectric RAM (F-RAM) organised as 512 × 8 bits, originally a Cypress part and now supplied under Infineon. It communicates over a two-wire I²C interface at clock speeds up to 1 MHz. Unlike EEPROM, F-RAM performs write operations at full bus speed with no write delays and no elevated internal programming voltage, drawing much lower power during writes. The device supports an endurance of 10¹⁴ read/write cycles and data retention of 151 years, making it effectively wear-free in most duty cycles. It operates from a 4.5–5.5 V supply across an industrial temperature range of −40 °C to +85 °C, and is packaged in an 8-pin SOIC.
Key specifications
| Memory type | Ferroelectric RAM (F-RAM), non-volatile |
|---|---|
| Density / organisation | 4 Kbit, 512 × 8 |
| Interface | I²C, up to 1 MHz |
| Supply voltage | 4.5–5.5 V |
| Endurance | 10¹⁴ read/write cycles |
| Data retention | 151 years |
| Operating temperature | −40 °C to +85 °C |
| Package | 8-SOIC |
Typical applications
F-RAM of this class stores frequently updated non-volatile data — event logs, counters, calibration values and configuration parameters — in metering, industrial control and embedded systems where EEPROM write latency or wear-out would be limiting. The instant-write behaviour also protects data captured in the final moments before power loss.
Supplied by BOLTON Technical Equipment Supplies against request for quotation. Add this item to your RFQ basket to request pricing, lead time and documentation requirements (e.g. CoC, datasheets or test reports where applicable).
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